In Stock:
13757
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.0 | |
| 10 | 4.9 | |
| 100 | 4.75 | |
| 1000 | 4.6 | |
| 10000 | 4.4 |
Specification
Vgs(th) (Max) @ Id5.5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-262
SeriesHEXFET®
Rds On (Max) @ Id, Vgs170 mOhm @ 9.8A, 10V
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
PackagingTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Other Names*IRFSL17N20D
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 16A (Tc) 3.8W (Ta), 140W (Tc) Through Hole TO-262
Current - Continuous Drain (Id) @ 25°C16A (Tc)
