In Stock:
10489
Pricing
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Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)700 V
Current-ContinuousDrain(Id)@25°C65A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)70mOhm @ 32.5A, 20V
RdsOn(Max)@Id2.5V @ 1mA
Vgs125 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247 [B]
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
